Professor Balandin's Nano-Device
Laboratory research group carries out
experimental research in the field of semiconductor and hybrid
bio-organic-inorganic nanostructures and novel
devices based on these nanostructures (see Figure 1). Experimental research is closely
correlated with the theoretical and modeling work performed in NDL. Apart
from research benefits of combining both theoretical and
experimental research in the same group,
the hands-on experience with different materials and device characterization
techniques is intended to improve NDL alumni's employment prospects.
Photo 1. Dr. Weili Liu with the low temperature characterization
setup. Nano-Device Laboratory, 2004.
Experimental equipment currently
available at the Nano-Device Laboratory include but not limited to
Renishaw micro-Raman spectroscopy
with capability to examine phonon spectrum over wide frequency range
(NeXT, Global Imaging, Mapping) under visible and UV excitation,
photoluminescence (PL) spectroscopy, thermal conductivity measurement
Signatone probe station with temperature
controlled chuck and Agilent HP4142-based SMUs for measuring current-voltage (I-V)
characteristics, Hall mobility measurement setup,
Agilent high-precision LCR meter
for capacitance - voltage (C-V) spectroscopy, atomic-force microscopy (AFM),
scanning tunneling microscopy (STM) and optical microscopy (see Figures 1-4).
Photo 2. Nano-device characterization setup
of I-V, C-V and thermal characteristics over
a wide range of
temperatures (4K- 600K). Nano-Device Laboratory, 2004.
The NDL experimental equipment
features in-house built thermal conductivity measurement setup (3-omega-method, which
is used for thermal characterization of nanostructures (see details on thermal measurements here). Electrical and
thermal characterization of nano-devices can be carrier out in a wide
range of temperatures from 4K to 600K.
In addition, NDL group members actively use facilities (see Figure 5) of the
Analytical Microscopy Laboratory
located in the same building, which include transmission
electron microscopy (TEM) and scanning electron microscopy (SEM).
Photo 3. Research Assistant Yun Bao performs capacitance spectroscopy
of Ge/Si quantum dot arrays. Nano-Device Laboratory, 2004.
Experimental activities in the
Nano-Device Laboratory are correlated with theoretical and
device modeling and simulation work. For, example experimental investigation of
GaN/AlGaN HFETs characteristics and self-heating effects is accompanied by
corresponding modeling efforts described in the Device
Photo 4. Staff Researcher Andre Morgan is working with
micro-Raman spectrometer. Nano-Device Laboratory, 2004.
More information on the experimental and theoretical projects
currently under way in the Nano-Device Laboratory (NDL) can be
To join NDL as a graduate student or postdoctoral research visit
the web-page HERE.
To learn more about course offering in the field of Materials,
Devices and Circuits visit the web-page HERE.
Photo 5. Postdoctoral Researcher Dr. Olga Lazarenkova studies nanostructures
TEM and SEM techniques. UCR, 2002.